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| SMD Type High Voltage Transistor BSS63R SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors Unit: mm Features +0.1 2.4-0.1 SOT23 PNP silicon planar +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Continuous collector current Power dissipation Operating and storage temperature range Symbol VCBO VCEO VEBO IC Ptot Tj,Tstg Rating -110 -100 -6 -100 330 -55 to +150 Unit V V V mA mW Electrical Characteristics Ta = 25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage * Emitter-base breakdown voltage Collector-base cut-off current Emitter-base current Collector-emitter saturation voltage Base-emitter saturation voltage DC current gain Transitional frequency Output capacitance * Pulse test: tp = 300 is; d 0.02. Symbol V(BR)CBO IC=-10iA V(BR)CEO IC=-100iA V(BR)EBO IE=-10iA ICBO IEBO VCB=-90V VCB=-90V,Ta = 150 VEB=-6V Testconditons Min -110 -100 -6 -100 -50 -200 -250 -900 30 30 50 85 3 MHz pF Typ Max Unit V V V nA iA nA V V VCE(sat) IC=-25mA, IB=-2.5mA VBE(sat) IC=-25mA, IB=-2.5mA hFE fT Cobo IC=-10mA,VCE=-1V IC=-25mA,VCE=-1V IC=25mA, VCE=-5V, f=35MHz VCB=-10V, f=1MHz Marking Marking T6 +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1 |
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